Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line RF POWER Field-Effect Transistors N *Channel Enhan.
Features
* 70 0.973 0.974 0.975 0.976 0.978 0.979 0.980 0.980 0.979 0.978 0.974 0.971 0.970 0.969 0.965 ∠φ
* 170
* 173
* 174
* 176
* 178 177 176 175 174 173 172 172 172 172 172 171 171 171 170 169 169 169 168 168 168 167 167 167 167 166 165 165 164 |S21| 16.01 13.73 12.02 10.
Applications
* at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large
* signal, common source amplifier applications in 28 volt base station equipment.
* Guaranteed Performance @ 945 MHz, 28 Volts Output Power = 60 Watts Power Gain = 11.5 dB Eff
