MTD3055VL Datasheet - Motorola

MTD3055VL TMOS POWER FET

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3055VL/D TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutatio.

MTD3055VL Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors Features Common to TMOS V and TMOS E

* FETS

* Avalanche Energy Specified

MTD3055VL_Motorola.pdf

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Datasheet Details

Part number:

MTD3055VL

Manufacturer:

Motorola

File Size:

209.48 KB

Description:

Tmos power fet.

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MTD3055VL MTD3055VL TMOS POWER FET Motorola

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