MTD3N25E Datasheet (Motorola) - TMOS POWER FET 3 AMPERES 250 VOLTS RDS

MTD3N25E, TMOS POWER FET 3 AMPERES 250 VOLTS RDS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3N25E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD3N25E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low volt

MTD3N25E Features

* rd mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 800 700 C, CAPACI