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MTD3N25E TMOS POWER FET 3 AMPERES 250 VOLTS RDS

MTD3N25E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3N25E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mo.

MTD3N25E Features

* rd mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 800 700 C, CAPACI

MTD3N25E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
MTD3N25E
Manufacturer
Motorola
File Size
253.49 KB
Datasheet
MTD3N25E_Motorola.pdf
Description
TMOS POWER FET 3 AMPERES 250 VOLTS RDS

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TMOS POWER FET AMPERES 250 VOLTS RDS Motorola
Motorola MTD3N25E-like datasheet