* Variation versus Gate Resistance DRAIN
* TO
* SOURCE DIODE CHARACTERISTICS 12 10 I S , SOURCE CURRENT (AMPS) 8 6 4 2 0 0.50 0.55 0.60 0.65 0.70 VGS = 0 V TJ = 25°C 0.75 0.80 0.85 0.90 0.95 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current SAF
MTD3055VL Datasheet (86.04 KB)
MTD3055VL
86.04 KB
Power mosfet.
MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N Channel DPAK This Power MOSFET is designed to withstand high energy in the avalan.
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