MTD1312 Datasheet - ON Semiconductor

MTD1312 Power MOSFET

MTD1312 Advance Information Power MOSFET 25 Amps, 30 Volts N Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating saf.

MTD1312 Features

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* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 30 http://onsemi.com 5 MTD1312 VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) t, TIME (ns) 12 QT 10 8.0 VGS 6.0 1000 VDD = 24 V ID = 20 A VGS = 10 V TJ = 25°C 100 td(off) tf tr 4.0 Q1 2.0 Q2 ID = 10 A TJ = 25°C 0 0 10 20

MTD1312-ONSemiconductor.pdf