MTD15N06V Datasheet - ON Semiconductor

MTD15N06V Power MOSFET

MTD15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTD15N06V Features

* oltage versus Total Charge VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) t, TIME (ns) 1000 100 10 VDD = 30 V ID = 15 A VGS = 10 V TJ = 25°C tr tf td(off) td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN

* TO

MTD15N06V-ONSemiconductor.pdf