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MTD10N10EL Power Field Effect Transistor DPAK

MTD10N10EL Description

MTD10N10EL TMOS E *FET™ Power Field Effect Transistor DPAK for Surface Mount N *Channel Enhancement *Mode Silicon Gate This advan.

MTD10N10EL Features

* VDSS 100 V http://onsemi. com RDS(ON) TYP 0.22 W ID MAX 10 A N
* Channel D
* Avalanche Energy Specified
* Source
* to
* Drain Diode Recovery Time Comparable to a Discrete
* Fast Recovery Diode Diode is Characterized for Use in Bridge C

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Power Field Effect Transistor DPAK ON Semiconductor
ON Semiconductor MTD10N10EL-like datasheet