Part number:
MTD10N10EL
Manufacturer:
File Size:
104.99 KB
Description:
Power field effect transistor dpak.
MTD10N10EL_ONSemiconductor.pdf
Datasheet Details
Part number:
MTD10N10EL
Manufacturer:
File Size:
104.99 KB
Description:
Power field effect transistor dpak.
MTD10N10EL, Power Field Effect Transistor DPAK
MTD10N10EL TMOS E FETâ„¢ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particu
MTD10N10EL Features
* VDSS 100 V http://onsemi.com RDS(ON) TYP 0.22 W ID MAX 10 A N
* Channel D
* Avalanche Energy Specified
* Source
* to
* Drain Diode Recovery Time Comparable to a Discrete
* Fast Recovery Diode Diode is Characterized for Use in Bridge C
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