MTD10N10EL Datasheet - ON Semiconductor

MTD10N10EL Power Field Effect Transistor DPAK

MTD10N10EL TMOS E FET™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particu.

MTD10N10EL Features

* VDSS 100 V http://onsemi.com RDS(ON) TYP 0.22 W ID MAX 10 A N

* Channel D

* Avalanche Energy Specified

* Source

* to

* Drain Diode Recovery Time Comparable to a Discrete

* Fast Recovery Diode Diode is Characterized for Use in Bridge C

MTD10N10EL_ONSemiconductor.pdf