MTD1302 - TMOS POWER FET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1302/D Advance Information HDTMOS E-FET ™ High Density Power FET DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplie
MTD1302 Features
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* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTD1302 VDS , DRAIN
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* SOURCE VOLTAGE (VOLTS) VGS, GATE
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* SOURCE VOLTAGE (VOLTS) 14 12 QT 10 8.0 6.0 Q1 4.0 2.0 0 Q3 VDS Q2 ID = 20 A TJ = 25°C