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MTD1N50E TMOS POWER FET

MTD1N50E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N50E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mo.

MTD1N50E Features

* ance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were

MTD1N50E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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Datasheet Details

Part number
MTD1N50E
Manufacturer
Motorola
File Size
215.60 KB
Datasheet
MTD1N50E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTD1N50E-like datasheet