MTD1N50E Datasheet - Motorola

MTD1N50E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N50E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mo.

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Datasheet Details

Part number:

MTD1N50E

Manufacturer:

Motorola

File Size:

215.60 KB

Description:

TMOS POWER FET

Features

* ance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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