* ance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were
MTD1N50E Datasheet (215.60 KB)
MTD1N50E
Motorola
215.60 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N50E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mo.
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