* e not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power
MTD1N60E Datasheet (215.36 KB)
MTD1N60E
Motorola
215.36 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N60E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mo.
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