Datasheet Specifications
- Part number
- MTD1N60E
- Manufacturer
- Motorola
- File Size
- 215.36 KB
- Datasheet
- MTD1N60E_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N60E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mo.
Features
* e not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most powerApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTD1N60E Distributors
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