MTD1N80E - TMOS POWER FET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N80E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.
In addition this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.
The new en
MTD1N80E Features
* nts. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mount
