* nts. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mount
MTD1N80E Datasheet (216.70 KB)
MTD1N80E
Motorola
216.70 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N80E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mo.
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