MTD15N06V Datasheet (Motorola)

MTD15N06V, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD15N06V/D Designer's TMOS V Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs.

This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.

Just as with our TMOS E FET designs, TMOS V is designed

MTD15N06V Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors ™ Data Sheet MTD15N06V Motorola Preferred Device TMOS POWER FET 15 AMPERES 60 VOLTS RDS(o