MTD15N06V Datasheet - Motorola

MTD15N06V TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD15N06V/D Designer's TMOS V Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E FET designs, TMOS V is designed.

MTD15N06V Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors ™ Data Sheet MTD15N06V Motorola Preferred Device TMOS POWER FET 15 AMPERES 60 VOLTS RDS(o

MTD15N06V Datasheet (185.66 KB)

MTD15N06V Datasheet Preview — Preview of MTD15N06V PDF

Datasheet Details

Part number:

MTD15N06V

Manufacturer:

Motorola

File Size:

185.66 KB

Description:

Tmos power fet.

📁 Related Datasheet

MTD15N06V Power MOSFET (ON Semiconductor)

MTD15N06VL TMOS POWER FET (Motorola)

MTD10N05E TMOS4 POWER FET (Motorola)

MTD10N10EL Power Field Effect Transistor DPAK (ON Semiconductor)

MTD1110 Stepping Motor Driver (Shindengen Electric)

MTD1120 Stepping Motor Driver (Shindengen Electric)

MTD1120F Stepping Motor Driver (Shindengen Electric)

MTD1121F Stepper Motor Driver (SHINDENGEN)

MTD12N06EZL High Energy Power FET DPAK (Motorola)

MTD1302 TMOS POWER FET (Motorola)

TAGS

MTD15N06V TMOS POWER FET Motorola

Image Gallery

MTD15N06V Distributor