MTD1P40E Datasheet (ON Semiconductor)

MTD1P40E, Power MOSFET

MTD1P40E Preferred Device Advance Information Power MOSFET 1 Amp, 400 Volts P Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition this advanced high voltage MOSFET is designed to withstand high energy in the avalanche and commutation modes.

The energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for

MTD1P40E Features

* GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 5 VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) t, TIME (ns) MTD1P40E 12 10 QT 600 500 8 VGS 400 6 Q