MTD1P50E Datasheet - Motorola

Datasheet Details

Part number:

MTD1P50E

Manufacturer:

Motorola

File Size:

97.38 KB

Description:

TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1P50E/D Product Preview TMOS E-FET .™ High Energy Power FET P *Channel Enhancement *Mode Silicon Gate This advanced high voltage TMOS E *FET is designed to withstand high energy in the avalanche mode and switch

MTD1P50E_Motorola.pdf

MTD1P50E Datasheet Preview — Preview of MTD1P50E PDF

MTD1P50E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1P50E/D Product Preview TMOS E-FET .™ High Energy Power FET P Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching applications such as power supplie

MTD1P50E Distributor

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