T3055EL Datasheet (Motorola)

T3055EL, MMFT3055EL

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT3055EL/D Medium Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS E FETt SOT 223 for Surface Mount This advanced E FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and commutation modes.

This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts.

This new energy efficient device also offe

T3055EL Features

* >

* VR + 4.0 IFM + 20 V

* IS VDS Li DUT 6.0 2.0 VGS 0 0 20 40 60 80 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) VR = 80% OF RATED VDSS VdsL = Vf + Li ⋅ dlS/dt Figure 10. Commutating Safe Operating Area (CSOA) Figure 11. Commutating Safe Operating Area Test Circuit BVDSS L VDS