VN0610LL - TMOS FET Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N Channel Enhancement 3DRAIN VN0610LL 2 GATE MAXIMUM RATINGS ® 1 SOURCE Rating Symbol Value Unit Drain Source Voltage Drain Gate Voltage (RGS = 1 MΩ) Gate Source Voltage Continuous Non repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID IDM PD 60 60 ± 20 ± 40 190 1000 400 3.
