Y100N10E Datasheet (Motorola)

Y100N10E, MTY100N10E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™Designer's Data Sheet TMOS E-FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching applications in power supplies, conver