Datasheet Details
- Part number
- Y100N10E
- Manufacturer
- Motorola
- File Size
- 215.74 KB
- Datasheet
- Y100N10E_Motorola.pdf
- Description
- MTY100N10E
Y100N10E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™Designer's Data Sheet TMOS E-FET.™ Power Field Effect Transistor NY100N10E Applications
* in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
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