BC108 - Low Power Bipolar Transistors
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate Above 25°C Power Dissipation at Tc = 25°C Derate Above 25°C Operating And Storage Junction Temperature Range Thermal Resistance Junction to Case SYMBOL VCEO VCBO
BC108 Features
* NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good hFE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Pin Configuration 1. Emitter. 2. Base. 3. Collector. Dimension A B C D E F G H J K L Minimum Maximum 5.24 5.84
