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BC108B - Low Power Bipolar Transistors

This page provides the datasheet information for the BC108B, a member of the BC107 Low Power Bipolar Transistors family.

Description

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate Above 25°C Power Dissipation at Tc = 25°C Derate Above 25°C Operating And Storage Junction Temperature Range Thermal Resistance Junction to Case SYMBOL VCEO VCBO

Features

  • NPN Silicon Planar Epitaxial Transistors. Suitable for.

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Datasheet preview – BC108B

Datasheet Details

Part number BC108B
Manufacturer Multicomp
File Size 162.22 KB
Description Low Power Bipolar Transistors
Datasheet download datasheet BC108B Datasheet
Additional preview pages of the BC108B datasheet.

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Other Datasheets by Multicomp
  • BC108 - Low Power Bipolar Transistors
  • BC108C - Low Power Bipolar Transistors
  • BC107 - Low Power Bipolar Transistors
  • BC107A - Low Power Bipolar Transistors
  • BC107B - Low Power Bipolar Transistors
  • BC109 - Low Power Bipolar Transistors
  • BC109B - Low Power Bipolar Transistors
  • BC109C - Low Power Bipolar Transistors

Full PDF Text Transcription

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BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good hFE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Pin Configuration 1. Emitter. 2. Base. 3. Collector. Dimension A B C D E F G H J K L Minimum Maximum 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 - 0.76 - 1.27 - 2.97 0.91 1.17 0.71 1.21 12.70 - 45° Dimensions : Millimetres Page 1 30/05/05 V1.
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