Description
A PN unijunction transistor in a TO-92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits (Ta = +25°C unless otherwise specified) Power Dissipation, Pd : 300mW Derate Above 25°C : 3.0mW/°C RMS Emitter Current, Ie(rms) : 50mA Peak Pulse Emitter Current (Note 1) Current, ie : 1.5A Emitter Reverse Voltage, Vb2e : 30V Interbase Voltage, Vb2b1 : 35V Operating Junction Temperature Range, Tj : -65°C to +125°C Storage Temperature Range, Tstg : -65°C to +150°C Parameter Instrinsic Standoff Ratio Interbase Resistance Interbase Resistance Temperature Coefficient Emitter Saturation Voltage Modulated interbase Current Emitter Reverse Current Peak Point Emitter Current Valley Point Current Base-One Peak Pulse Voltage Symbol rbb Veb1(sat) Ib2(mod) Ieb20 Ip Iv VOb1 Test Conditi.
