NCE603S - N & P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCE603S
Manufacturer	NCE Power Semiconductor
File Size	406.26 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE603S-NCEPowerSemiconductor.pdf

The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V Schematic diagram.
P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE603S NCE603S SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (TA=25℃unles.

📁 NCE603S Similar Datasheet

Other Datasheets by NCE Power Semiconductor

Published: Jun 2, 2018 |