* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D D G S N-Channel MOSFET www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drai
NCE6012AS Datasheet (220.78 KB)
NCE6012AS
VBsemi
220.78 KB
N-channel 60v mosfet.
NCE6012AS-VB
NCE6012AS-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 6 V ID.
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