* Low Gate Charge Qg Results in Simple Drive Requirement
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS
* COMPLIANT
* Fully Characterized Capacitance and Avalanche Voltage and Current
* Compliant to RoHS directive 2002/95/EC TO-252 GDS
NCE65R2K2K Datasheet (947.18 KB)
NCE65R2K2K
VBsemi
947.18 KB
Power mosfet.
NCE65R2K2K Power MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 1.8 48.
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