Datasheet Details
| Part number | NCE60H10F |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 379.32 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE60H10F-NCEPowerSemiconductor.pdf
|
| Part number | NCE60H10F |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 379.32 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
NCE60H10F-NCEPowerSemiconductor.pdf
|
The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.7mΩ) Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipati
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