NCE60H10A - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCE60H10A
Manufacturer	NCE Power Semiconductor
File Size	346.35 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE60H10A-NCEPowerSemiconductor.pdf

The NCE60H10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V (Typ:4.8mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Special designed for convertors and power controls.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram Marking and pin assignment.

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Published: Jun 2, 2018 |