NCE60H10A Datasheet, Mosfet, NCE Power Semiconductor

NCE60H10A Features

• Mosfet
• VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V (Typ:4.8mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current <

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Part number:

NCE60H10A

Manufacturer:

NCE Power Semiconductor

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346.35kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE60H10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable f

NCE60H10A Application

• Applications General Features
• VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V (Typ:4.8mΩ)
• High density cell design for ultra lo

TAGS

NCE60H10A

NCE Power Semiconductor

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