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NCE6890 - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE6890
Manufacturer	NCE Power Semiconductor
File Size	336.87 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6890-NCEPowerSemiconductor.pdf

NCE6890 Product details

Description

The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 68V,ID =90A RDS(ON) < 7.5mΩ @ VGS=10V (Typ:6.5mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

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Published: Jun 2, 2018 |