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NCE6990 - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE6990
Manufacturer	NCE Power Semiconductor
File Size	395.36 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6990-NCEPowerSemiconductor.pdf

NCE6990 Product details

Description

The NCE6990 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =69V,ID =90A RDS(ON) < 7.0mΩ @ VGS=10V (Typ:5.7mΩ) Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jun 2, 2018 |