NCE7190H Datasheet, Mosfet, NCE Power Semiconductor

NCE7190H Features

• Mosfet
• VDS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)
• Special process technology for high ESD capability
• High density cell design for ultra low Rdson <

PDF File Details

Part number:

NCE7190H

Manufacturer:

NCE Power Semiconductor

File Size:

334.87kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE7190H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE7190H Application

• Applications General Features
• VDS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)
• Special process technology for high ES

TAGS

NCE7190H

NCE Power Semiconductor

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