• Part: NCEP60T15G
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 1.09 MB
Download NCEP60T15G Datasheet PDF
NCE Power Semiconductor
NCEP60T15G
Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Schematic diagram General Features - VDS =60V,ID =150A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.8mΩ) - Excellent gate charge x RDS(on) product - Very low on-resistance RDS(on) - 150 °C operating temperature - Pb-free lead plating - 100% UIS tested Only Use Marking and pin assignment s Application e - DC/DC Converter m - Ideal for high-frequency switching and synchronous ti rectification DDDD DDDD g 100% UIS TESTED! n 100% ΔVds TESTED! ongshe Package Marking and Ordering Information T Device Marking Device Device Package SSSG Top View GSSS Bottom View Reel Size Tape width Quantity P60T15G DFN5X6-8L - For Absolute Maximum...