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NCEP60T15K - N-Channel Super Trench Power MOSFET

General Description

The NCEP60T15K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =60V,ID =150A RDS(ON) < 3.4mΩ @ VGS=10V (Typ:3.1mΩ).
  • Excellent gate charge x RDS(on) product.
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Schematic diagram.

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Datasheet Details

Part number NCEP60T15K
Manufacturer NCE Power Semiconductor
File Size 371.27 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP60T15K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCEP60T15K NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =60V,ID =150A RDS(ON) < 3.4mΩ @ VGS=10V (Typ:3.