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NCEP60T15G - N-Channel Super Trench Power MOSFET

General Description

frequency switching performance.

low combination of RDS(ON) and Qg.

Key Features

  • VDS =60V,ID =150A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.8mΩ).
  • Excellent gate charge x RDS(on) product.
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Only UseMarking and pin assignment s.

📥 Download Datasheet

Datasheet Details

Part number NCEP60T15G
Manufacturer NCE Power Semiconductor
File Size 1.09 MB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP60T15G Datasheet

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Full PDF Text Transcription (Reference)

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NCEP60T15G NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Schematic diagram General Features ● VDS =60V,ID =150A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.