Datasheet Summary
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
Schematic diagram
General Features
- VDS =60V,ID =150A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.8mΩ)
- Excellent gate charge x RDS(on) product
- Very low on-resistance RDS(on)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Only UseMarking and pin assignment s Application e
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