Datasheet4U Logo Datasheet4U.com

2SC3587 Datasheet - NEC

2SC3587 NPN EPITAXIAL SILICON TRANSISTOR

2SC3587 Features

* Low noise : NF = 1.7 dB TYP. @ f = 2 GHz C 3.8 MIN. 3.8 MIN. B NF = 2.6 dB TYP. @ f = 4 GHz

* High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz 3.8 MIN. 45 ° ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitte

2SC3587 Datasheet (91.02 KB)

Preview of 2SC3587 PDF
2SC3587 Datasheet Preview Page 2 2SC3587 Datasheet Preview Page 3

Datasheet Details

Part number:

2SC3587

Manufacturer:

NEC

File Size:

91.02 KB

Description:

Npn epitaxial silicon transistor.

📁 Related Datasheet

2SC3580 SMALL-SIGNAL TRANSISTOR (Isahaya Electronics)

2SC3581 SMALL-SIGNAL TRANSISTOR (Isahaya Electronics Corporation)

2SC3582 NPN Silicon Transistor (NEC)

2SC3582 Silicon NPN RF Transistor (Inchange Semiconductor)

2SC3583 NPN Silicon Transistor (NEC)

2SC3583 NPN EPITAXIAL SILICON TRANSISTOR (UTC)

2SC3583 Silicon NPN RF Transistor (Inchange Semiconductor)

2SC3583 NPN Silicon Epitaxial Transistor (Kexin)

TAGS

2SC3587 NPN EPITAXIAL SILICON TRANSISTOR NEC

2SC3587 Distributor