2SC3587 NPN EPITAXIAL SILICON TRANSISTOR

NEC

Description

DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transi.

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Datasheet Specifications

Part number: 2SC3587
Manufacturer: NEC
File Size: 91.02 KB
Datasheet: 2SC3587_NEC.pdf
Description: NPN EPITAXIAL SILICON TRANSISTOR

Features

* Low noise : NF = 1.7 dB TYP. @ f = 2 GHz C 3.8 MIN. 3.8 MIN. B NF = 2.6 dB TYP. @ f = 4 GHz
* High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz 3.8 MIN. 45 ° ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitte

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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2SC3587 NPN EPITAXIAL SILICON TRANSISTOR NEC

NEC 2SC3587-like datasheet