* large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES
* High hFE and low VCE(sat): hFE ≅ 800 (VCE = 2 V, IC = 3 A) VCE(sat) ≅ 0.12 V (IC = 3 A, IB = 0.03 A)
* On-chip C to E damper diode
* Mold package t
2SC4553
NEC
159.21 KB
Npn silicon transistor.
DATA SHEET
SILICON POWER TRANSISTOR
2SC4553
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4553 is a power transistor designed es.
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