* Super low on-state resistance: RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) 5 RDS(on)2 = 41 mΩ MAX. (VGS = 4.0 V, ID = 20 A)
* Low Ciss: Ciss = 1500 pF TYP.
* Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to S
2SK3433
NEC
48.29 KB
N-channel mosfet.
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3433 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3433.
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