* 1.2 ±0.1
* 0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
* Low noise
* 109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
* Super thin thickness package t = 0.37 mm TYP. 0.8 ±0.1
* High gain 3 0 to 0.05 0.45 0.45 MAX. 0.4 1.4 ±0.1 ORDERING INFORMATION PART NUMBE
2SK3719
NEC
148.54 KB
Switching n-channel power mosfet.
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
www.DataSheet4U.com
2SK3719
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER .
📁 Related Datasheet
2SK371 - N-Channel MOSFET
(Toshiba Semiconductor)
.
2SK3710 - MOSFET
(Sanken)
SANKEN ELECTRIC ２ＳＫ３７１０
http://.sanken-ele.co.jp May. 2011
Features ･ Low on-state resistance 5.0mΩ VGS=10V ･ Built-in gate protection diode ･SMD.
2SK3710 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
2SK3710
FEATURES ·Drain Current –ID=85A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resis.
2SK3711 - N-Channel MOSFET
(Sanken electric)
60V N -ch MOSFET
2SK3711
December 2005
■Features
• Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed
■Appl.
2SK3711 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
2SK3711
FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resis.
2SK3712 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3712
FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 250V(Min) ·Static Drain-Source On-R.
2SK3712 - SWITCHING N-CHANNEL POWER MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
..
2SK3712
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3712 is N-channel MOS FET d.
2SK3712-Z - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3712-Z
FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 250V(Min) ·Static Drain-Source On.
