A1757 Datasheet - NEC

A1757 - UPA1757

This product is Dual N-Channel MOS Field Effect Transistor www.DataSheet4U.com Package Drawing (Unit : mm) designed for power management application of notebook computers, and Li-ion battery application.

8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max

A1757 Features

* Dual MOS FET chips in small package

* 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A) 1.44 6.0 ±0.3 4.4 0.8 RDS(on)2 = 32 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)

* Built-in G-S protection diode

* Small and surface mount pa

A1757_NEC.pdf