B984 Datasheet - NEC

B984 PNP SIlicon Transistor

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S 1 8 D PD TJ, TSTG EAS S 2 7 D S 3 D 6 D G 4 5 D P0093-01 (1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06inch thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2.

B984 Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source

B984-NEC.pdf