D17P137ACT Datasheet (NEC)

D17P137ACT, UPD17P137ACT

Change of name µPD1713XA to µPD17134A subseries Correction of (2) Program memory write/verify mode in 1.4 PIN CONFIGURATION Change of Figure 3-2 Value of Program Counter after Instruction Partial correction of 3.2.2 On Execution of Branch Instruction (BR) Partial correction of 3.2.3 On During Execut

U11607EJ3V0UM00 (3rd edition) Date Published December 1996 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation.

Steps must be taken to stop generation of static

D17P137ACT Features

* NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device dep