φ3.2 ± 0.2
*
*
*
Low On-state Resistance RDS(on) = 0.26 Ω MAX. (VGS = 10 V, ID = 6.0 A)
3 ± 0.1 1 2 3 4 ± 0.2
High Avalanche Capability Ratings
Drain to .
PACKAGE DIMENSIONS
(in millimeters)
10.0 ± 0.3 4.5 ± 0.2 2.7 ± 0.2
FEATURES
φ3.2 ± 0.2
*
*
*
Low On-st.
The 2SK2341 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ± 0.3 4.5 ± 0.2 2.7 ± 0.2
FEATURES
φ3.2 ± 0.2
*
*
*
Low On-state Resistance RDS(on).
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