Description
The 2SK2341 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications.
Features
- φ3.2 ± 0.2.
- Low On-state Resistance RDS(on) = 0.26 Ω MAX. (VGS = 10 V, ID = 6.0 A)
3 ± 0.1 1 2 3 4 ± 0.2
High Avalanche Capability Ratings
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
VDSS VGSS ID (DC) ID (pulse).
- 250 ± 30 ± 11 ± 44 35 2.0.
- 55 to +150 150 11 320
V V A A W W °C °C A mJ
1 2 3 0.7 ± 0.1 2.54 TYP. 13.5 MIN. 0.65 ± 0.1.
K2341 Datasheet
