2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source
1 2 3
MP-45F (ISOLATED TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Drain.
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.
This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. www.DataSheet4U.com
15.0 ± 0.3
3 ± 0.1 4 ± 0.2
* Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (V.
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