K2726
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Silicon n-channel mosfet.
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K2723 - 2SK2723
(NEC)
DATA SHEET
MOS Field Effect Power Transistors
2SK2723
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DIMENSIONS (in millimeter)
10.0 ± 0.3.
K2725 - 2SK2725
(Renesas Technology)
2SK2725
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary br.
K2728 - 2SK2728
(Hitachi)
2SK2728
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • High speed switching • Low drive current • Avalanche rati.
K270 - Silicon Zener Diodes
(Aeroflex)
Silicon Zener Diodes
Glass Axial Leaded
Low Level, Very Low Voltage, Low Leakage
Model
K120 K150 K180 K210 K240 K270 K300 K330 K360 K390 K430 K470 .
K270 - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE
(Knox Inc)
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse lea.
K2700 - 2SK2700
(Toshiba Semiconductor)
2SK2700
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSIII)
2SK2700
Chopper Regulator, DC–DC Converter and Motor Drive Applications.
K2708 - 2SK2708
(Sanken)
2SK2708
External dimensions 1 FM20
Absolute Maximum Ratings (Ta = 25ºC)
Symbol
Ratings
Unit
VDSS
600 V
VGSS
±30 V
ID
*ID (pulse) 1
±.
K2711 - 2SK2711
(Rohm)
.DataSheet.co.kr
Transistors
Switching (250V, 16A)
2SK2711
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating a.
K2715 - 2SK2715
(Rohm)
Transistors
Switching (500V, 2A)
2SK2715
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source v.
K2717 - Silicon N Channel MOS Type Field Effect Transistor
(Toshiba)
2SK2717
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2717
DC−DC Converter and Motor Drive Applications
Unit: mm
l Low d.
