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NE434S01-T1B C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NE434S01-T1B Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET .
The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

NE434S01-T1B Features

* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. , Ga = 15.5 dB TYP. at f = 4 GHz Gate Width: Wg = 280 Pm 0. 2 ORDERING INFORMATION PART NUMBER NE434S01-T1 NE434S01-T1B SUPPLYING FORM Tape & reel 1000 pcs. /reel Tape & reel 4000 pcs. /reel MARKING E 4 3 0.65 TYP.

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Datasheet Details

Part number
NE434S01-T1B
Manufacturer
NEC
File Size
77.49 KB
Datasheet
NE434S01-T1B_NEC.pdf
Description
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NEC
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