NE434S01-T1B C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NEC

Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET .
The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

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Datasheet Specifications

Part number: NE434S01-T1B
Manufacturer: NEC
File Size: 77.49 KB
Datasheet: NE434S01-T1B_NEC.pdf
Description: C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Features

* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. , Ga = 15.5 dB TYP. at f = 4 GHz Gate Width: Wg = 280 Pm 0. 2 ORDERING INFORMATION PART NUMBER NE434S01-T1 NE434S01-T1B SUPPLYING FORM Tape & reel 1000 pcs. /reel Tape & reel 4000 pcs. /reel MARKING E 4 3 0.65 TYP.

NE434S01-T1B Distributors

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NE434S01-T1B BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NEC

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