* Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBV/75
* Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm 0.7 mm (t) ceramic substrate) 2
* Small package : 3-pin power mini mold package ORDERING I
NE46234
CEL
162.64 KB
Npn silicon rf transistor.
NPN SILICON RF TRANSISTOR
NE46234 / 2SC4703
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
DESC.
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