NE46134
NEC
137.62kb
Necs npn medium power microwave transistor. NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic rang
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NE46134-T1 - NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
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NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR
FEATURES
• HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc
Output Power, POUT (dBm)
30.0 28.0
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• HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc
Output Power, POUT (dBm)
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FEATURES
HIGH COLLECTOR CURRENT: 250 mA MAX • NEW HIGH GAIN POWER MINI-MOLD P.
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NE4210M01 - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
(NEC)
PRELIMINARY DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE.
NE4210S01 - X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
(NEC)
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210S01
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210S01 is a.
NE4210S01 - X to Ku BAND SUPER LOW NOISE AMPLIFIER
(CEL)
Drop-In DISReplacement: CONTICE3512K2 NUED
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210S01
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHAN.
NE42484A - NONLINEAR MODEL
(NEC)
NONLINEAR MODEL
NE42484A
SCHEMATIC
(see Page 2)
FET NONLINEAR MODEL PARAMETERS (1)
Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC(2) Q DELTA VBI IS .