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NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NE461M02 Description

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER .
The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulatio.

NE461M02 Features

* HIGH COLLECTOR CURRENT: 250 mA MAX
* NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE)
* HIGH OUTPUT POWER AT 1 dB COMPRESSION: www. DataSheet4U. com 27 dBm TYP at 1 GHz
* HIGH IP3: 37 dBm TYP at 1 GHz
* NE461M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02

NE461M02 Applications

* requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE461M02 is an excellent choice for low noi

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Datasheet Details

Part number
NE461M02
Manufacturer
NEC
File Size
71.00 KB
Datasheet
NE461M02_NEC.pdf
Description
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

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📌 All Tags

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
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