NE461M02 Datasheet (NEC) - NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NE461M02, NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion.

This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and dir

NE461M02 Features

* HIGH COLLECTOR CURRENT: 250 mA MAX

* NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE)

* HIGH OUTPUT POWER AT 1 dB COMPRESSION: www.DataSheet4U.com 27 dBm TYP at 1 GHz

* HIGH IP3: 37 dBm TYP at 1 GHz

* NE461M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02