NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NEC

Description

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER .
The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulatio.

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Datasheet Specifications

Part number: NE461M02
Manufacturer: NEC
File Size: 71.00 KB
Datasheet: NE461M02_NEC.pdf
Description: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

Features

* HIGH COLLECTOR CURRENT: 250 mA MAX
* NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE)
* HIGH OUTPUT POWER AT 1 dB COMPRESSION: www. DataSheet4U. com 27 dBm TYP at 1 GHz
* HIGH IP3: 37 dBm TYP at 1 GHz
* NE461M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02

Applications

* requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE461M02 is an excellent choice for low noi

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NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC

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