NECs Datasheet | Specifications & PDF Download

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz •

(37 views)

NoiseDISFigure,NF(dB)CONTINUED Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB) NPN SILICON RF TRANSISTOR NE856 SERIE

(35 views)

PRELIMINARY DATA SHEET www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • • • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICAT

(35 views)

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz NE

(33 views)

NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTP

(33 views)

www.DataSheet4U.com NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GH

(33 views)

NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTP

(32 views)

NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz • LOW Cre: 0.9 p

(30 views)

www.DataSheet4U.com NONLINEAR MODEL SCHEMATIC CCB NE68800 Q1 LB CCE LC LE BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE

(30 views)

PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • • IDEAL FOR LOW NOISE, HIGH-GAIN AMP

(30 views)

PRELIMINARY DATA SHEET www.DataSheet4U.com NEC's NPN SiGe TRANSISTOR NESG210719 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIG

(30 views)

NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES • LOW COST PLASTIC PACKAGE • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA • H

(29 views)

NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc Output Power, POUT (dBm) 30.0 28.0 NE46100 NE4

(29 views)

NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01 FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz • OUTPUT POWER (at 1 dB compression): 15 dB

(28 views)

PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TY

(28 views)

www.DataSheet4U.com NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise

(28 views)

NEC's NPN SiGe RF TRANSISTOR www.DataSheet4U.com FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES

(28 views)

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz •

(27 views)

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz •

(27 views)

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz •

(27 views)