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UPC3217GV - NECs GENERAL PURPOSE 5 V AGC AMPLIFIER
NEC's GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV FEATURES • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYN.MC-7883 - NECs 870 MHz GaAs CATV POWER DOUBLER AMPLIFIER
MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC.NE58219 - NECs NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz • LOW Cre: 0.9 p.NE85630 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz • .MC7883 - NECs 870 MHz GaAs CATV POWER DOUBLER AMPLIFIER
MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC.MC-7882 - NECs 870 MHz GaAs CATV POWER DOUBLER AMPLIFIER
MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC.NE68800 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
www.DataSheet4U.com NONLINEAR MODEL SCHEMATIC CCB NE68800 Q1 LB CCE LC LE BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE.NE85619 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz • .NESG3031M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TY.MC7881 - NECs 870 MHz GaAs CATV POWER DOUBLER AMPLIFIER
MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC.MC7882 - NECs 870 MHz GaAs CATV POWER DOUBLER AMPLIFIER
MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC.UPG2030TB - NECs 1W L/ S-BAND SPDT SWITCH
NEC's 1W L, S-BAND SPDT SWITCH UPG2030TB FEATURES • SWITCH CONTROL VOLTAGE: Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP..UPC3218GV - NECs GENERAL PURPOSE 5 V AGC AMPLIFIER
NEC's GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV FEATURES • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYN.MC-7881 - NECs 870 MHz GaAs CATV POWER DOUBLER AMPLIFIER
MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC.MC7884 - NECs 870 MHz GaAs CATV POWER DOUBLER AMPLIFIER
MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC.NE681 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz NE.NE856 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NoiseDISFigure,NF(dB)CONTINUED Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB) NPN SILICON RF TRANSISTOR NE856 SERIE.NE85632 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz • .NE85635 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz • .NE85639R - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz • .