NECs Datasheet | Specifications & PDF Download

NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTP

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NEC's 1550 nm InGaAsP MQW DFB LASER DIODE NX8503BG-CC IN COAXIAL PACKAGE NX8503CG-CC FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES • PEAK EMISSION W

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NEC's 1550 nm InGaAsP MQW DFB LASER DIODE NX8503BG-CC IN COAXIAL PACKAGE NX8503CG-CC FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES • PEAK EMISSION W

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NEC's 1.8 V L, S-BAND UPG2006TB SPDT SWITCH FEATURES • LOW INSERTION LOSS: LINS = 0.3 dB TYP. @ Vcont = 1.8 V/0 V, f = 1 GHz LINS = 0.45 dB TYP. @ Vco

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NEC's ¼ W SINGLE CONTROL UPG2012TK L, S-BAND SPDT SWITCH FEATURES • SUPPLY VOLTAGE: VDD = 2.7 to 3.0 V (2.8 V TYP.) • SINGLE SWITCH CONTROL VOLTAGE: V

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NEC's 1W L, S-BAND SPDT SWITCH UPG2030TB FEATURES • SWITCH CONTROL VOLTAGE: Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.

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DATA SHEET NEC's 1 W UPG2030TK ULTRA SMALL SPDT SWITCH FEATURES • SWITCH CONTROL VOLTAGE: Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.) Vcont (L) = −0.2 to +

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NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES • • • • • LOW VOLTAGE, LOW CURRENT OPERATION LOW CAPACITANCE FOR WIDE TUNING RANGE SMALL PACKAGE OUTLINE

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NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES • • • • LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm LOW HEIGHT PROFILE: 1

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NEC’s LOW POWER GPS RF RECEIVER BIPOLAR ANALOG + INTEGRATED CIRCUIT UPB1009K DESCRIPTION The µPB1009K is a silicon monolithic IC developed for GPS r

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NEC's 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER FEATURES • FLAT GAIN: ∆GP = ±1 dB TYP from 100 to 700 MHz • 1000 MHz FREQUENCY RESPONSE AT 3 dB DOWN •

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NEC's 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER FEATURES • FLAT GAIN: ∆GP = ±1 dB TYP from 100 to 700 MHz • 1000 MHz FREQUENCY RESPONSE AT 3 dB DOWN •

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NEC's GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV FEATURES • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYN

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NEC's GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV FEATURES • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYN

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MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC

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MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC

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MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC

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MC-7881 NEC's 870 MHz GaAs CATV MC-7882 POWER DOUBLER AMPLIFIER MC-7883 MC-7884 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC

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NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz • LOW Cre: 0.9 p

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NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES • LOW COST PLASTIC PACKAGE • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA • H

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