Part number:
NP88N055EHE
Manufacturer:
NEC
File Size:
265.24 KB
Description:
Mos field effect transistor.
NP88N055EHE Features
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
* Low input capacitance Ciss = 7600 pF TYP.
* Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change
NP88N055EHE Datasheet (265.24 KB)
Datasheet Details
NP88N055EHE
NEC
265.24 KB
Mos field effect transistor.
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