NP88N055EHE

MOS FIELD EFFECT TRANSISTOR

NEC

NP88N055EHE Features

* Channel temperature 175 degree rated

* Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A)

* Low input capacitance Ciss = 7600 pF TYP.

* Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change

NP88N055EHE General Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP88N055EHE-E1-AY NP88N055EHE-E2-AY NP88N055KHE-E1-AY NP88N055KHE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING.

NP88N055EHE Datasheet (265.24 KB)

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Part number:

NP88N055EHE

Manufacturer:

NEC

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265.24 KB

Description:

Mos field effect transistor.
www.DataSheet.co.kr DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055EHE, NP88N055KHE NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE SWITCHING N-C.

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NP88N055EHE MOS FIELD EFFECT TRANSISTOR NEC

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NP88N055EHE Features

NP88N055EHE General Description

Datasheet Details

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Description:

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