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NP88N055EHE, NP88N055CHE MOS FIELD EFFECT TRANSISTOR

NP88N055EHE Description

www.DataSheet.co.kr DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055EHE, NP88N055KHE NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE SWITCHING N-C.
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

NP88N055EHE Features

* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
* Low input capacitance Ciss = 7600 pF TYP.
* Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change

NP88N055EHE Applications

* ORDERING INFORMATION PART NUMBER NP88N055EHE-E1-AY NP88N055EHE-E2-AY NP88N055KHE-E1-AY NP88N055KHE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP88N055

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This datasheet PDF includes multiple part numbers: NP88N055EHE, NP88N055CHE. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
NP88N055EHE, NP88N055CHE
Manufacturer
NEC
File Size
265.24 KB
Datasheet
NP88N055CHE_NEC.pdf
Description
MOS FIELD EFFECT TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: NP88N055EHE, NP88N055CHE.
Please refer to the document for exact specifications by model.

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MOS FIELD EFFECT TRANSISTOR NEC
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