NP80N04MLG

N-CHANNEL POWER MOS FET

Renesas

NP80N04MLG Features

* Logic level

* Built-in gate protection diode

* Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N04PLG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ

NP80N04MLG General Description

The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N04MLG-S18-AY Note NP80N04NLG-S18-AY Note NP80N04PLG-E1B-AY Note NP80N04PLG-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING .

NP80N04MLG Datasheet (281.58 KB)