Description
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These products are N-channel MOS Field Effect Transistors designed for high current switching applications.ORDERING INFORMATION
PART NUMBER NP80N04EHE-E1-AY NP80N04EHE-E2-AY NP80N04KHE-E1-AY NP80N04KHE-E2-AY
Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1
LEAD PLATING
PACKING
PACKAGE TO-263 (MP-25ZJ) typ.1.4 g
Pure Sn (Tin)
Tape 800 p/reel TO-263 (MP-25ZK) typ.1.5 g
NP80N04CHE-S12-AZ NP80N04DHE-S12-AY NP80N04MHE-S18-AY NP80N04NHE-S18-AY
Sn-Ag-Cu Tube 5
Features
- Channel temperature 175 degree rated.
- Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A).
- Low input capacitance Ciss = 2200 pF TYP.
- Built-in gate protection diode (TO-262)
(TO-263)
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