NP80N04PDG

N-CHANNEL POWER MOS FET

Renesas

NP80N04PDG Features

* Logic level

* Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N04PDG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

NP80N04PDG General Description

The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N04MDG-S18-AY Note NP80N04NDG-S18-AY Note NP80N04PDG-E1B-AY Note NP80N04PDG-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING .

NP80N04PDG Datasheet (380.50 KB)